V. V. Krutov, È. A. Zasovin, V. G. Mikhalevich, A. S. Sigov, A. A. Shchuka, “Double pulse heterothermal technology for the formation of domain structures in ferroelectrics”, Fizika Tverdogo Tela, 2012, Volume 54, Issue 5,Pages <nobr>908

This article is cited in 4 papers

Proceedings of the XIX All-Russian Conference on Physics of Ferroelectrics (VKS-XIX) (Moscow, Russia, June 19-23, 2011

Double pulse heterothermal technology for the formation of domain structures in ferroelectrics

V. V. Krutov^a, È. A. Zasovin^a, V. G. Mikhalevich^b, A. S. Sigov^a, A. A. Shchuka^a

^a Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow, 119454, Russia
^b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: A technology for the formation of one- and two-dimensional structures by means of interfering (electromagnetic or acoustic) waves and a homogeneous electric field has been proposed. This technology has made it possible to retune the spatial period of the structure during its operation by varying the frequency of interfering waves and the angles of their incidence onto a crystal. It has been shown that the duration of the technological cycle slightly exceeds the domain switching time. The technology is applicable to crystals of LiNbO$_3$, KTiOPO$_4$ (with a high potassium content), and some others.