Electronic band structure and distribution of excited electrons in the conduction band of anatase doped with boron, nitrogen, and carbon

A method for calculating the distribution of excited electrons in the conduction band of semiconductors has been proposed. This method takes into account both the excitation of electrons by means of an external light source and the transitions to the bottom of the conduction band due to the electron-phonon interaction. The interaction of electrons with the light field has been calculated from first principles in the dipole approximation using the linear muffin-tin orbital method. The electron-phonon interaction has been calculated in terms of the density functional perturbation theory. The method has been applied to the calculation of the quasi-steady-state distribution function of excited electrons in anatase doped with boron, nitrogen, and carbon. The correlations of the distribution function with the photocatalytic activity of doped anatase have been discussed.