I. N. Ivukin, D. M. Artem'ev, V. E. Bugrov, M. A. Odnoblyudov, A. E. Romanov, “Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates”, Fizika Tverdogo Tela, 2012, Volume 54, Issue 12,Pages <nobr>2294

This article is cited in 1 paper

Mechanical properties, strength physics and plasticity

Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

I. N. Ivukin^ab, D. M. Artem'ev^ab, V. E. Bugrov^ab, M. A. Odnoblyudov^a, A. E. Romanov^abc

^a Optogan-OLS, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Ioffe Institute, St. Petersburg

Abstract: The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity factor $K_I$ has been calculated for the model considering a crack at the GaN/sapphire interface near an open pore. Based on the calculations of elastic fields, the redistribution of stresses by a structure with an ordered array of open pores in gallium nitride films has been estimated.

Received: 16.04.2012