V. A. Soltamov, I. V. Il'in, A. A. Soltamova, D. O. Tolmachev, E. N. Mokhov, P. G. Baranov, “Identification of nitrogen vacancies in an AlN single crystal: EPR and thermoluminescence investigations”, Fizika Tverdogo Tela, 2011, Volume 53, Issue 6,Pages <nobr>1121

Semiconductors

Identification of nitrogen vacancies in an AlN single crystal: EPR and thermoluminescence investigations

V. A. Soltamov, I. V. Il'in, A. A. Soltamova, D. O. Tolmachev, E. N. Mokhov, P. G. Baranov

Ioffe Institute, St. Petersburg

Abstract: The electronic structure of nitrogen vacancies in specially undoped aluminum nitride single crystals has been determined and the depth of the donor level of these vacancies in the band gap has been found to be $\sim$75 meV by combined electron paramagnetic resonance and thermoluminescence investigations.

Received: 12.11.2010