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Fizika Tverdogo Tela, 2010 Volume 52, Issue 4, Pages 639–642 (Mi ftt13673)

This article is cited in 7 papers

Semiconductors and dielectrics

Crystal structure and electrical properties of Gd$_x$Mn$_{1-x}$S è Ti$_x$Mn$_{1-x}$Se solid solutions

A. I. Galyasa, O. F. Demidenkoa, G. I. Makovetskiia, K. I. Yanushkevicha, L. I. Ryabinkinabc, O. B. Romanovabc

a Scientific-Practical Materials Research Centre of NAS of Belarus
b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
c M. F. Reshetnev Siberian State Aerospace University,

Abstract: Regions of the existence of sulfide Gd$_x$Mn$_{1-x}$S and selenide Ti$_x$Mn$_{1-x}$Se solid solutions have been identified. Their electrical and thermoelectric properties have been studied in the temperature range 80–900 K. It has been established that the substitution of Gd$^{2+}$ and Ti$^{2+}$ ions for Mn$^{2+}$ cations initiates reversal of the type of charge carrier with respect to the starting compounds MnS and MnSe. The cation substitution in solid solutions brings about a change from the hole conduction ($\alpha>$ 0) characteristic of the manganese monosulfide and monoselenide to the electronic conduction ($\alpha<$ 0).

Received: 25.08.2009


 English version:
Physics of the Solid State, 2010, 52:4, 687–690

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