Abstract:
The multilayer structure consisting of alternating semiconductor (InSe) and molecular nematic (MN) nanointerlayers has been prepared using the intercalation techniques. The stages of the preparation of the InSeInSe$\langle$MN$\rangle$ structures have been described, and the results of investigation of their physical properties by impedance spectroscopy have been reported. The structures of the impedance models have been proposed, and prospects for their use as ultrahigh-capacitance varicaps and nanostructured elements of delay lines that can be directly incorporated into nanochips have been justified.