M. V. Dorokhin, S. V. Zaitsev, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskii, M. M. Prokof'eva, A. E. Sholina, “Influence of delta$\langle$Mn$\rangle$ doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures”, Fizika Tverdogo Tela, 2010, Volume 52, Issue 11,Pages 2147

This article is cited in 10 papers

Proceedings of the XIV International Symposium ''Nanophysics and Nanoelectronics-2010'' (Nizhni Novgorod, Russia, March 15-19, 2010)
Magnetism and ferroelectricity

Influence of delta$\langle$Mn$\rangle$ doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures

M. V. Dorokhin^a, S. V. Zaitsev^b, A. S. Brichkin^b, O. V. Vikhrova^a, Yu. A. Danilov^a, B. N. Zvonkov^a, V. D. Kulakovskii^b, M. M. Prokof'eva^a, A. E. Sholina^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a delta$\langle$Mn$\rangle$ layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the delta$\langle$Mn$\rangle$ layer and the quantum well, atomic concentration in the delta$\langle$Mn$\rangle$ layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence.