E. V. Ubyivovk, D. K. Loginov, I. Ya. Gerlovin, Yu. K. Dolgikh, Yu. P. Efimov, S. A. Eliseev, V. V. Petrov, O. F. Vyvenko, A. A. Sitnikova, D. A. Kirilenko, “Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well”, Fizika Tverdogo Tela, 2009, Volume 51, Issue 9,Pages <nobr>1818

Low-dimensional systems and surface physics

Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well

E. V. Ubyivovk^a, D. K. Loginov^a, I. Ya. Gerlovin^a, Yu. K. Dolgikh^a, Yu. P. Efimov^a, S. A. Eliseev^a, V. V. Petrov^a, O. F. Vyvenko^a, A. A. Sitnikova^b, D. A. Kirilenko^b

^a Saint Petersburg State University
^b Ioffe Institute, St. Petersburg

Abstract: The thickness of the GaAs “dead layer” in the GaAs/AlGaAs heterostructure has been directly measured. The widths of the dead layer obtained in the experiment are compared with the values for the same material interfacing with the external medium which were found earlier, as well as with theoretical predictions made by different authors.

Received: 20.11.2008
Accepted: 25.12.2008