Scaling of magnetoresistance of carbon nanomaterials in Mott-type hopping conductivity region

A method for analyzing data on Mott hopping conduction in a magnetic field, $\rho\sim\exp[(T_0/T)^\alpha]$, based on scaling relation $\ln[\rho(H)/\rho(0)]=(T_0/T)^\alpha F(H/T)$ for the spin-polarized contribution to the magnetore-sistance is proposed. This general approach is tested for a carbon nanomaterial synthesized from single-wall carbon nanotubes under high pressure (up to 7 GPa). The experiments confirmed the theoretical predictions over the temperature range 1.8–12.0 K in a magnetic field of up to 70 kOe and made it possible to correctly determine all parameters of the localized states involved in the model. The experimental data obtained for carbon nanomaterials synthesized from single-wall carbon nanotubes and a mixture of C$_{2N}$ fullerenes indicate the possible renormalization of the magnetic moment of electrons involved in hopping transport.