Short Notes

Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing

A. S. Vasin, V. I. Okulich, V. A. Panteleev, D. I. Tetelbaum

Gor'kii State University named after N. I. Lobachevskogo

UDC: 621.3I5.592

Received: 31.07.1984