Electron-paramagnetic-res of tensoprobe in silicon doped with $\mathrm{Gd}$

A. A. Bugai, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich

Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR

UDC: 539.319

Received: 14.01.1984

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