Effect of band filling by nonequilibrium carriers on self-diffraction in $\mathrm{Si}$

V. D. Asimova, R. G. Zaporozhchenko, V. A. Zaporozhchenko, I. V. Pilipovich

Institute of Physics of the Academy of Sciences of the Byelorussia SSR, Minsk

UDC: 537.311.33+621.315.592

Received: 10.08.1987
Revised: 15.08.1988

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