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// Fizika Tverdogo Tela
// Archive
Fizika Tverdogo Tela,
1989
Volume 31,
Issue 6,
Pages
100–104
(Mi ftt5409)
Temperature-induced line broadening of the excitons trapped at III-neutral and V-group atoms in silicon single crystals
A. S. Kaminskii
,
A. N. Safonov
Institute of Radio Engineering and Electronics, Academy of Sciences of the USSR
UDC:
621.15.592
Received:
18.07.1988
Revised:
04.01.1989
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Steklov Math. Inst. of RAS
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