Point defect interaction with $\mathrm{B}$ atoms and $\mathrm{P}$ atoms in $\mathrm{Si}$ at a high Frenkel pair creation rate

L. I. Fedina, A. L. Aseev

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

UDC: 537.311.33;548.7;621.385.833

Received: 21.12.1988
Revised: 29.05.1989

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