E. N. Kalabukhova, S. N. Lukin, B. D. Shanina, E. N. Mokhov, “Effect of $\mathrm{Ge}$ and excess $\mathrm{Si}$ on the ESR spectrum of nitrogen donor states in $6H\mathrm{SiC}$”, Fizika Tverdogo Tela, 1990, Volume 32, Issue 3,Pages 789

Effect of $\mathrm{Ge}$ and excess $\mathrm{Si}$ on the ESR spectrum of nitrogen donor states in $6H\mathrm{SiC}$

E. N. Kalabukhova^a, S. N. Lukin^b, B. D. Shanina^b, E. N. Mokhov^c

^a Donetsk Physical-Technical Institute of Ukraine Academy of Sciences
^b Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR
^c Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

UDC: 621.315.592

Received: 21.08.1989