Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films

Investigation of transition metals effect on the phase composition, electrical and dielectric properties of diamond-like silicon-carbon films prepared by the plasma-chemical decomposition of polyphenylmethylsiloxane have been carried out. Frequency, temperature and concentration dependences of these properties are obtained. It is shown that an increase in the metal concentration in the film leads to a continuous increase in the electrical conductivity, while the concentration dependences of the dielectric constant and the dielectric loss tangent have a minimum at metal concentrations of 0.5–2 at.%. Possible reasons for this phenomenon are analyzed.