S. M. Afanas'ev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film”, Fizika Tverdogo Tela, 2021, Volume 63, Issue 11,Pages <nobr>1895

Continued publication of the materials of the seminar in FTT N 12/21
Ferroelectricity

The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film

S. M. Afanas'ev^a, D. A. Belorusov^a, D. A. Kiselev^ab, A. A. Sivov^a, G. V. Chucheva^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
^b National University of Science and Technology «MISIS», Moscow, Russia

Abstract: Films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZr$_{x}$Ti$_{1-x}$O$_{3}$ (PZT). Comparative results of electrophysical properties of three different metal-dielectric-metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni.

Keywords: metal-dielectric-metal structures, ferroelectric films of composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$, a buffer layer, electrophysical properties.

Received: 05.07.2021
Revised: 05.07.2021
Accepted: 07.07.2021

DOI: 10.21883/FTT.2021.11.51594.161