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Fizika Tverdogo Tela, 2021 Volume 63, Issue 8, Pages 1049–1055 (Mi ftt8062)

Semiconductors

Spectroscopy of reflected electron energy losses of $\gamma$-Fe$_{2}$O$_{3}$

A. S. Parshina, Yu. L. Mikhlinb, G. A. Alexandrovaa

a M. F. Reshetnev Siberian State University of Science and Technologies, Krasnoyarsk, Russia
b Institute of Chemistry and Chemical Technology SB RAS, Krasnoyarsk, Russia

Abstract: The reflection electron energy losses spectra, obtained in a wide primary electron energy range of 200–3000 eV, are investigated. From these experimental spectra, for each primary electron energy, the spectra of the inelastic scattering cross section of electrons are calculated as the dependence of the product of the inelastic electron mean free path and the differential inelastic scattering cross section of electrons on the electron energy loss. The analysis of the fine structure of the reflection electron energy losses was carried out by decomposing the electron energy losses spectra in the region of energy losses of valence electrons into elementary peaks. A relationship is established between each of their elementary peaks with single and multiple energy losses due to the excitation of bulk and surface plasmons and interband transitions of electrons from the valence band to free states above the Fermi level. The analysis of the obtained results was carried out on the basis of experimental and theoretical literature data on the band structure of $\gamma$-Fe$_{2}$O$_{3}$.

Keywords: electron spectroscopy, inelastic scattering cross section, plasmon.

Received: 23.03.2021
Revised: 11.04.2021
Accepted: 13.04.2021

DOI: 10.21883/FTT.2021.08.51152.053


 English version:
Physics of the Solid State, 2021, 63:8, 1294–1300

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© Steklov Math. Inst. of RAS, 2024