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Fizika Tverdogo Tela, 2021 Volume 63, Issue 6, Pages 706–711 (Mi ftt8106)

Metals

Electronic structure of graphene on silicon carbide intercalated with silicon and cobalt atoms

S. M. Dunaevskiiab, E. Yu. Lobanovac, E. K. Mikhailenkoab, I. I. Pronind

a The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute", Gatchina, Russia
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
d Ioffe Institute, St. Petersburg, Russia

Abstract: The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer.

Keywords: graphene on silicon carbide, cobalt, intercalation, silicides, density functional theory.

Received: 16.02.2021
Revised: 16.02.2021
Accepted: 18.02.2021

DOI: 10.21883/FTT.2021.06.50926.033


 English version:
Physics of the Solid State, 2021, 63:6, 819–824

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© Steklov Math. Inst. of RAS, 2024