O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov, “Tensostimulated effect in a doped and heat-treated silicon at an oriented deformation”, Fizika Tverdogo Tela, 2021, Volume 63, Issue 5,Pages <nobr>602

Semiconductors

Tensostimulated effect in a doped and heat-treated silicon at an oriented deformation

O. O. Mamatkarimov^a, O. Khimmatkulov^b, I. G. Tursunov^cd

^a Namangan Engineering and Technology Institute, Namangan, Uzbekistan
^b Tashkent State Technical University, Tashkent, Uzbekistan
^c Chirchiq State Pedagogical Institute, Chirchik, Uzbekistan
^d National University of Uzbekistan named after M. Ulugbek, Tashkent, Uzbekistan

Abstract: The tensostimulated effect in heat-treated and doped silicon was investigated. It is shown that uniaxial compression in the [111] direction leads to the decay of thermal donors and the hysteresis development in the dependences of the resistivity on the compression value. It was found that the strain-stimulated effect in manganese-compensated silicon samples is due to simultaneous changes in the concentration and mobility of current carriers.

Keywords: deformation, tensoresistance, silicon, alloying, uniaxial.

Received: 17.12.2020
Revised: 17.12.2020
Accepted: 14.01.2021

DOI: 10.21883/FTT.2021.05.50807.262