Effect of electron and hole doping on the transport characteristics of chalcogenide systems

The electrical properties of the Ag$_{0.01}$Mn$_{0.99}$S and Tm$_{0.01}$Mn$_{0.99}$S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80–400 K in a magnetic field of 12 kOe. Using the I–V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.