E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 2021, Volume 63, Issue 4,Pages 421

This article is cited in 2 papers

Semiconductors

Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$

E. V. Ivanova^a, P. A. Dementev^a, M. V. Zamoryanskaya^a, D. A. Zakgeim^b, D. Yu. Panov^b, V. A. Spiridonov^b, A. V. Kremleva^b, M. A. Odnoblyudov^bc, D. A. Bauman^b, A. E. Romanov^ab, V. E. Bugrov^b

^a Ioffe Institute, St. Petersburg, Russia
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
^c Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

Abstract: $\beta$-Ga$_{2}$O$_{3}$ bulk crystals were grown by the Czochralski method and studied. It was shown that the localization of charge of both signs is observed in the sample on the basis of the dynamics of the absorbed current and cathodoluminescence. It was demonstrated that the localization of electrons leads to a significant decrease in the cathodoluminescence intensity.

Keywords: bulk gallium oxide, luminescence, charge carrier traps.

Received: 11.11.2020
Revised: 11.11.2020
Accepted: 07.12.2020

DOI: 10.21883/FTT.2021.04.50705.236