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Fizika Tverdogo Tela, 2021 Volume 63, Issue 4, Pages 427–432 (Mi ftt8141)

This article is cited in 2 papers

Semiconductors

Spin-polarized electric current in Cd$_{48.6}$Mn$_{11.4}$As$_{40}$ nanocomposite

L. A. Saypulaevaa, Z. Sh. Pirmagomedova, M. M. Gadzhialieva, A. G. Alibekova, N. V. Melnikovab, V. S. Zakhvalinskiic, A. I. Rild, S. F. Marenkinde

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
b Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, Russia
c National Research University "Belgorod State University", Belgorod, Russia
d Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
e National University of Science and Technology «MISIS», Moscow, Russia

Abstract: The temperature dependences of electrical resistivity and magnetization have been measured in the Cd$_{48.6}$Mn$_{11.4}$As$_{40}$ nanocomposite in the temperature range 10–350 K. It is shown that the electrical properties of Cd$_{48.6}$Mn$_{11.4}$As$_{40}$ are due to spin-polarized electrons injected from ferromagnetic MnAs nanoclusters inward the Cd$_3$As$_2$ matrix. If the magnetic ordering among nanoclusters increases, the spin-polarized current increases as well. In addition, an increase in the concentration of intrinsic carriers in the host matrix leads to an increase in the spin-polarized current also. This concept is confirmed by measurements of current-voltage characteristics (CVC) at the temperatures: a) below the critical temperature of formation of cluster glass $T_{cg}$ = 241 (i.e. at 77 and 172 K) b) and above it (i.e. at 273.15 and 373.15 K), which exhibit a deviation from ohmicity, increasing with voltage. This means that the greater is the spin polarization of intrinsic electrons in Cd$_3$As$_2$, due to an increase in the injection of spin-polarized electrons from MnAs with voltage, the higher is the current.

Keywords: spin, nanocomposites, voltage-current characteristic, resistance, spin polarization, semiconductors, spin injection, magnetization.

Received: 24.11.2020
Revised: 24.11.2020
Accepted: 27.11.2020

DOI: 10.21883/FTT.2021.04.50706.243


 English version:
Physics of the Solid State, 2021, 63:4, 644–649

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© Steklov Math. Inst. of RAS, 2024