Semiconductor lateral spin device with half-metallic ferromagnet electrodes

In a semiconductor spin device with electrodes formed from the Fe$_{2}$NbSn half-metallic ferromagnet film, a spin polarization of $P_{\mathrm{S}}$ = 4% of electrons injected into the InSb semiconductor has been obtained. This corresponds to the maximum possible $P_{\mathrm{S}}$ value for transparent contacts of a semiconductor and a ferromagnet, in which the polarization is $P_{\mathrm{F}}$ = 95%. It is shown that, to ensure the effective injection of spin-polarized electrons from a ferromagnet into a semiconductor, it is necessary to use a ferromagnet with the 100% electron polarization or to form an additional high-resistance layer in the interface.