V. V. Ivanov, E. N. Golubeva, O. N. Sergeeva, G. M. Nekrasova, I. P. Pronin, D. A. Kiselev, “Quasi-stationary processes of the dielectric relaxation in polycrystalline thin PZT films”, Fizika Tverdogo Tela, 2020, Volume 62, Issue 10,Pages <nobr>1665

Ferroelectricity

Quasi-stationary processes of the dielectric relaxation in polycrystalline thin PZT films

V. V. Ivanov^a, E. N. Golubeva^a, O. N. Sergeeva^ab, G. M. Nekrasova^b, I. P. Pronin^c, D. A. Kiselev^d

^a Tver State University
^b Tver State Agricultural Academy
^c Ioffe Institute, St. Petersburg
^d National University of Science and Technology «MISIS», Moscow

Abstract: The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The dielectric relaxation is shown to be characterized at least by three relaxation times depending on the direction of the self-polarization in the film, the value of the polarizing field, and also the PZT film annealing temperature.

Keywords: thin polycrystalline PZT films, RF magnetron sputtering, dielectric relaxation.

Received: 17.04.2020
Revised: 17.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTT.2020.10.49916.093