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Fizika Tverdogo Tela, 2020 Volume 62, Issue 9, Pages 1420–1427 (Mi ftt8312)

This article is cited in 2 papers

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10-13, 2020
Superconductivity

Control of superconducting transitions in nanowires using galvanically uncoupled gates for designing superconductor-based electronic devices

B. A. Gurovicha, K. E. Prikhod'koab, L. V. Kutuzova, B. V. Goncharova

a National Research Centre "Kurchatov Institute", Moscow
b National Engineering Physics Institute "MEPhI", Moscow

Abstract: A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al$_2$O$_3$ layer, contains an integrated resistance formed by ion irradiation. Dependences of the minimum power released in the gate that is sufficient for nanowire to pass to the normal state on the dc current through the nanowire are experimentally obtained. A signal inverter containing three successive cascades is developed based on this principle. This design shows that the proposed approach can be used to form a logic element base for cryogenic computing.

Keywords: thin superconducting NbN films, contactless switching of superconductor state, cryoelectronic device, integrated cryogenic resistors.

Received: 26.03.2020
Revised: 26.03.2020
Accepted: 02.04.2020

DOI: 10.21883/FTT.2020.09.49764.23H


 English version:
Physics of the Solid State, 2020, 62:9, 1585–1591

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