Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$

The memristive properties of layered capacitor structures based on a (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanocomposite and LiNbO$_{3}$ with thicknesses of 10 and 40 nm, respectively, are studied. There was a sharp transition from a single-filament to multi-filament resistive switching mechanism observed for the first time which appeared with an increase in an amount of the metal phase in the nanocomposite; this mechanism is explained within a model proposed previously.