L. A. Saypulaeva, M. M. Gadzhialiev, A. G. Alibekov, N. V. Melnikova, V. S. Zakhvalinskii, A. I. Ril, S. F. Marenkin, A. N. Babushkin, “Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure”, Fizika Tverdogo Tela, 2020, Volume 62, Issue 6,Pages 834

This article is cited in 4 papers

International conference ''Phase transitions, critical and nonlinear phenomena in condensed matter'', Makhachkala, September 15-20, 2019
Semiconductors

Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure

L. A. Saypulaeva^a, M. M. Gadzhialiev^a, A. G. Alibekov^a, N. V. Melnikova^b, V. S. Zakhvalinskii^c, A. I. Ril^d, S. F. Marenkin^d, A. N. Babushkin^b

^a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
^b Institute of Natural Sciences and Mathematics, Ural Federal University
^c National Research University "Belgorod State University"
^d Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow

Abstract: The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd$_{3}$As$_{2}$–20 mol % MnAs composite are investigated at pressures up to 9 GPa. The pressure dependences of all the listed properties exhibit features related to phase transitions. The presence of pressure-induced negative magnetoresistance is registered.

Keywords: high pressure, Hall effect, electrical resistivity, negative magnetoresistance, structural phase transition.

Received: 30.12.2019
Revised: 30.12.2019
Accepted: 10.01.2020

DOI: 10.21883/FTT.2020.06.49333.32M