Resistive switching of memristors based on stabilized zirconia by complex signals

The specific features of resistive switching, which was initiated by triangular pulses with a high-frequency sine signal imposed on them, in experimental memristor prototypes based on thin films of yttria-stabilized zirconia were examined. It was found that memristors switched by these complex signals have lower switching voltage, higher ratio of currents in low- and high-resistance states, and better long-term current stability than memristors switched by triangular pulses without the sine signal. This improvement of switching parameters is associated with resonance activation of migration of oxygen ions via vacancies in the alternating external electric field.