M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 2020, Volume 62, Issue 3,Pages <nobr>422

Ferroelectricity

Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films

M. S. Afanasiev^a, D. A. Kiselev^ab, S. A. Levashov^a, A. A. Sivov^a, G. V. Chucheva^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b National University of Science and Technology «MISIS», Moscow

Abstract: The effect of the synthesis temperature on the microstructure and the electrophysical properties of metal–dielectric–semiconductor structures based on ferroelectric films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ upon the formation of $p$-type silicon substrates with [100] orientation is studied. It was experimentally established that an increase in the synthesis temperature leads to an improvement in the dielectric and piezoelectric properties of ferroelectric films. The temperature stability and stability in the behavior of the capacitance–voltage characteristics of MIS structures on the number of switching cycles are shown.

Keywords: metal, dielectric–semiconductor structures, ferroelectric films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$, microstructure, scanning probe microscopy, capacitance–voltage characteristics, capacitance, switching cycles.

Received: 18.10.2019
Revised: 18.10.2019
Accepted: 23.10.2019

DOI: 10.21883/FTT.2020.03.49008.611