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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2020 Volume 62, Issue 2, Pages 208–213 (Mi ftt8486)

This article is cited in 3 papers

Semiconductors

Dependence of the longitudinal-transverse exciton splitting in a quantum well on an external homogeneous electric field

D. K. Loginov, A. V. Donets

Saint Petersburg State University

Abstract: A decrease in the longitudinal-transverse exciton splitting in a wide GaAs/AlGaAs quantum well (QW) in a homogeneous electric field has been theoretically considered. The dependences of the splitting on the applied field have been determined. The exciton reflection spectra of the wide QW have been calculated for the case where the field is oriented across the QW layer. The amplitude of exciton-related spectral oscillations is shown to decrease due to a decrease of the photo-excitonic interaction.

Keywords: exciton, electric field, reflectance spectra, quantum well.

Received: 25.09.2019
Revised: 25.09.2019
Accepted: 02.10.2019

DOI: 10.21883/FTT.2020.02.48869.599


 English version:
Physics of the Solid State, 2020, 62:2, 246–251

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© Steklov Math. Inst. of RAS, 2024