International Conference "Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films", dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) Saint Petersburg, July 1-5, 2019 Semiconductors
Mathematical simulation of the process of growing a cdte single crystal by the Obreimov–Shubnikov method
Abstract:
For the first time, the process of growing a CdTe crystal by the modified Obreimov–Shubnikov method using the technique of self-nucleation from the initial cooling temperature (1100$^\circ$C) to the time of reaching the stationary growth mode is simulated. The motion of the crystallization front during crystal growth is calculated. The results are confirmed by the X-ray topography method with use of synchrotron
radiation.