Abstract:
In this paper, we present the results of experimental studies of the frequency and temperature dependences of the electrical conductivity of metal–dielectric–semiconductor structures based on ferroelectric films of the Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ composition. In the temperature range of 290–400 K and the frequency range of 25–10$^6$ Hz, the conductivity was found to obey the $\sigma\propto f^{0.76}$ law, which is characteristic of the hopping mechanism of charge transfer over states localized near the Fermi level. The density of these states, average distance and time of jumps are estimated.