International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019 Semiconductors
On thermomigration velocity of liquid cylindrical inclusions in a crystal under stationary thermal conditions
Abstract:
The dependences of the velocity and the cross section shape of the inclusion on the cross sectional area at the various interfacial energy density, degree of its anisotropy, and degree of difficulty of the interfacial processes have been calculated and analyzed on the basis of model ideas on the cross section shape of the liquid cylindrical inclusion migrating in a crystal under the action of a temperature gradient in stationary thermal conditions. The possibility of the nonmonotonic dependence of the velocity of the cylindrical inclusion on the area and thickness of its cross section is shown.
Keywords:thermomigration, liquid inclusions, interface kinetics, interfacial energy anisotropy.