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Fizika Tverdogo Tela, 2019 Volume 61, Issue 12, Page 2312 (Mi ftt8554)

This article is cited in 4 papers

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

Effect of gamma irradiation on conductivity of Cd$_{1-x}$Fe$_{x}$Te

M. A. Mehrabovaa, H. R. Nuriyevb, H. S. Orujovbc, N. H. Hasanovd, T. I. Êårimovaa, A. A. Abdullayevac, A. I. Kazimovae

a Institute of Radiation Problems of ANAS Baku, Baku, Azerbaijan
b Institute of Physics of ANAS named after academician G.M. Abdullayev, Baku, Azerbaijan
c Azerbaijan Technical University, Baku, Azerbaijan
d Baku State University, Baku, Azerbaijan
e Ganja State University, Baku Azerbaijan

Abstract: The effect of $\gamma$-irradiation at the dose $D_{\gamma}$ = 605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd$_{1-x}$Fe$_{x}$Te semimagnetic semiconductors were investigated. The character of the $\varepsilon'(T)$ dependences of the irradiated Cd$_{1-x}$Fe$_{x}$Te changes: there is a drop in the curves in the temperature range of 300/400 K at measurement frequencies 25 Hz–1 MHz, and $\varepsilon$' increases by 20 times. In the $\sigma(T)$ dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity.

Keywords: semimagnetic semiconductors, dielectric permittivity, conductivity, measurement frequencies, $\gamma$-irradiation.

Received: 30.06.2019
Revised: 30.06.2019
Accepted: 01.07.2019

Language: English


 English version:
Physics of the Solid State, 2019, 61:12, 2306–2309

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