A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution”, Fizika Tverdogo Tela, 2019, Volume 61, Issue 12,Pages <nobr>2313

This article is cited in 2 papers

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution

A. S. Grashchenko^a, S. A. Kukushkin^ab, A. V. Osipov^c

^a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^b Herzen State Pedagogical University of Russia, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The elastic properties of a nanoscale film of silicon carbide grown on a silicon substrate by atom substitution are studied. For the first time, the Young's modulus of nanoscale silicon carbide was measured by nanoindentation. Using optical profilometry and spectral ellipsometry, the structural characteristics of a silicon carbide film on silicon were studied, namely, the film roughness and its thickness were calculated.

Keywords: nanoindentation, atomic substitution, silicon carbide, silicon carbide on silicon, Young's modulus.

Received: 16.07.2019
Revised: 16.07.2019
Accepted: 25.07.2019

DOI: 10.21883/FTT.2019.12.48590.33ks