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Fizika Tverdogo Tela, 2019 Volume 61, Issue 12, Page 2333 (Mi ftt8561)

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography

S. N. Rodina, V. V. Lundina, A. F. Tsatsul'nikovb, A. V. Sakharova, S. O. Usovb, M. I. Mitrofanova, I. V. Levitskiia, V. P. Evtikhieva, M. A. Kaliteevskic

a Ioffe Institute, St. Petersburg, Russia
b Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences, St. Petersburg, Russia
c ITMO University, St. Petersburg, Russia

Abstract: A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.

Keywords: selective epitaxy, dislocations in GaN, self-organized coaxial structure, MOCVD, FIB.

Received: 16.07.2019
Revised: 16.07.2019
Accepted: 24.07.2019

Language: English


 English version:
Physics of the Solid State, 2019, 61:12, 2335–2337

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