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Fizika Tverdogo Tela, 2019 Volume 61, Issue 12, Pages 2344–2348 (Mi ftt8564)

This article is cited in 2 papers

International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Semiconductors

Studies of thermoelectric properties of superlattices based on manganese silicide and germanium

M. V. Dorokhin, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Zdoroveyshchev, P. B. Demina, I. V. Erofeeva

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: In this paper, we present the results of the study of thermoelectric materials formed by pulsed laser deposition on sapphire substrates and representing thin MnSi$_{1.74}$ films with intermediate germanium layers. A sharp decrease in the thermal conductivity coefficient of superlattices based on manganese silicides and germanium in comparison with single layers of manganese silicide with an equivalent thickness is shown. This allows significantly increasing the thermoelectric figure of merit. The obtained values of the coefficient of thermoelectric figure of merit are comparable with the known literature values that are typical for similar structures.

Keywords: thin films, higher manganese silicide, superlattices, Seebeck thermoelectric effect, thermoelectric figure of merit.

Received: 16.07.2019
Revised: 16.07.2019
Accepted: 25.07.2019

DOI: 10.21883/FTT.2019.12.48550.56ks


 English version:
Physics of the Solid State, 2019, 61:12, 2348–2352

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