Fizika Tverdogo Tela, 2019 Volume 61, Issue 12,Pages 2421–2424(Mi ftt8582)
International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019 Phase transitions
Phenomenological models of nucleation and growth of metal on a semiconductor
Abstract:
Four modes of metal growth on a semiconductor substrate have been detected and distinguished on the basis of experimental data obtained under similar conditions using hot wall epitaxy. These modes are achieved at certain ratios between translational kinetic energy of vapor deposited onto substrate and its temperature. The mechanism of adaptation to the substrate of nanophase wetting coating of metal is proposed when the mode of pure metal growth is implemented, as is the structural model of this coating.
Keywords:wetting, growth, vapor– substrate interaction, metal – semiconductor system, electronic and optical spectroscopy.
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