V. E. Asadchikov, I. G. D'yachkova, D. A. Zolotov, F. N. Chukhovskii, L. M. Sorokin, “Microstructure of Si crystals subjected to irradiation with high-energy H<nobr>$^+$</nobr> ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy”, Fizika Tverdogo Tela, 2019, Volume 61, Issue 10,Pages <nobr>1754

This article is cited in 1 paper

Semiconductors

Microstructure of Si crystals subjected to irradiation with high-energy H$^+$ ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy

V. E. Asadchikov^a, I. G. D'yachkova^a, D. A. Zolotov^a, F. N. Chukhovskii^a, L. M. Sorokin^b

^a Shubnikov Institute of Crystallography, Federal Research Centre Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
^b Ioffe Institute, St. Petersburg

Abstract: The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the microdefect concentration in Si crystals irradiated with protons with energies 100 + 200 + 300 keV with the total dose 2 $\times$ 10$^{16}$ cm$^{-2}$ and the evolution of the defect structure during heat treatment have been obtained by high-resolution three-crystal X-ray diffraction and transmission electron microscopy over wide temperature range from 200 to 1100$^\circ$C.

Keywords: silicon, hydrogen ions, three-crystal x-ray diffractometry, transmission electron microscopy, post-implantation annealing, radiation defects.

Received: 29.05.2019
Revised: 29.05.2019
Accepted: 04.06.2019

DOI: 10.21883/FTT.2019.10.48245.498