M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films”, Fizika Tverdogo Tela, 2019, Volume 61, Issue 10,Pages <nobr>1948

This article is cited in 4 papers

Surface physics, thin films

The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films

M. S. Afanasiev^a, D. A. Kiselev^ab, S. A. Levashov^a, A. A. Sivov^a, G. V. Chucheva^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b National University of Science and Technology «MISIS», Moscow

Abstract: In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.

Keywords: metal-dielectric-metal structures, ferroelectric Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ films, microstructure, electrophysical properties, scanning probe microscopy.

Received: 22.04.2019
Revised: 22.04.2019
Accepted: 23.04.2019

DOI: 10.21883/FTT.2019.10.48275.463