Response of the dielectric parameters of (110)SrTiO$_{3}$ films to the formation of ferroelectric domains in their volume

Three-layer SrRuO$_{3}$/SrTiO$_{3}$/SrRuO$_{3}$ heterostructures were grown by laser evaporation on (110)LaAlO$_{3}$ substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO$_{3}$ layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO$_{3}$ intermediate layer upon varying the temperature and intensity of an external electric field was studied.