Entrainment of electrons in a semiconductor nanostructure by a flow of neutral particles

The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.