The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron

Layers of InAs, InSb, and GaSb semiconductors highly doped with iron during their growth by the method of pulsed laser deposition are studied experimentally. The best temperatures for layer formation on GaAs (100) substrates are: 250$^{\circ}$C (InSb : Fe), 300$^{\circ}$C (InAs : Fe), and 350$^{\circ}$C (GaSb : Fe). At high Fe concentration (over 10 at %) the layers display ferromagnetic properties expressed in emergence of a hysteresis curve within the magnetic field dependences of the Hall resistance, negative magnetoresistance, and in some cases, ferromagnetic-type magnetization at measurements at room temperature. The atoms of iron do not change the type of layer conductivity; InAs : Fe and InSb : Fe layers possess $n$-type conductivity, and GaSb : Fe layers display $p$-type conductivity due to their intrinsic point defects.