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Fizika Tverdogo Tela, 2018 Volume 60, Issue 11, Pages 2147–2151 (Mi ftt9008)

This article is cited in 2 papers

XXII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 12-15, 2018
Semiconductors

Effect of laser fluence on magnetic properties of thin Mn$_{x}$Si$_{1-x}$ ($x\approx$ 0.5) films prepared by pulsed laser deposition

A. B. Drovosekova, A. O. Savitskyab, N. M. Kreinesa, V. V. Ryl'kovcd, S. N. Nikolaevc, K. Yu. Chernoglazovc, A. N. Taldenkovc, E. A. Cherebyloe, V. A. Mikhalevskiie, O. A. Novodvorskiie, K. I. Maslakovf, P. Pandeyg, Sh. Zhoug

a P. L. Kapitza Institute for Physical Problems, Russian Academy of Sciences, Moscow
b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
c National Research Centre "Kurchatov Institute", Moscow
d Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
e Institute on Laser and Information Technologies, Russian Academy of Scienses, Shatura, Moskovskaya obl.
f Lomonosov Moscow State University
g Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany

Abstract: The effect of laser pulse energy E on the possibility of forming of a homogeneous “high-temperature” ferromagnetic phase in Mn$_{x}$Si$_{1-x}$ ($x\approx$ 0.5) alloy films grown by pulsed laser deposition onto an Al$_2$O$_3$ (0001) substrate has been studied. The high-temperature phase with manganese concentration $x\approx$ 0.53 and the Curie temperature $T_C\sim$ 200–300 K is shown to form near the substrate at the initial stage of the film growth. In this case, high values $E\ge$ 6.8 J/cm$^2$ favor the stabilization of this phase over all film thickness, while low values $E$ = 2.6–5.7 J/cm$^2$ lead to a decrease in the manganese concentration in the upper film layer and the formation of additional “low–temperature” phase with $T_C\approx$ 30–50 K provided by silicides MnSi and Mn$_4$Si$_7$ crystallites.

Keywords: Pulsed Laser Deposition (PLD), Silicide MnSi, Laser Pulse Energy Density, Manganese Silicide, Al$_2$O$_3$ Substrate.

DOI: 10.21883/FTT.2018.11.46655.21NN


 English version:
Physics of the Solid State, 2018, 60:11, 2188–2193

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