M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, I. S. Mukhin, S. V. Ivanov, A. A. Toropov, “Single-photon emission from InAs/AlGaAs quantum dots”, Fizika Tverdogo Tela, 2018, Volume 60, Issue 4,Pages <nobr>687

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Semiconductors

Single-photon emission from InAs/AlGaAs quantum dots

M. V. Rakhlin^a, K. G. Belyaev^a, G. V. Klimko^a, I. S. Mukhin^bc, S. V. Ivanov^a, A. A. Toropov^a

^a Ioffe Institute, St. Petersburg
^b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function $g^{2}(\tau)$ in a wide spectral range from 630 to 730 nm.

Received: 02.11.2017

DOI: 10.21883/FTT.2018.04.45675.310