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Fizika Tverdogo Tela, 2018 Volume 60, Issue 4, Pages 701–705 (Mi ftt9232)

This article is cited in 1 paper

Dielectrics

Structure and properties of SiO$_{x}$ films prepared by chemical etching of amorphous alloy ribbons

V. A. Fedorova, A. D. Bereznera, A. I. Beskrovnyib, T. N. Fursovac, A. V. Pavlikovd, A. V. Bazhenovc

a Tambov State University named after G.R. Derzhavin
b Joint Institute for Nuclear Research, Dubna, Moscow region
c Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
d Lomonosov Moscow State University

Abstract: The structure and the physical properties of amorphous SiO$_{x}$ films prepared by chemical etching of an iron-based amorphous ribbon alloy have been studied. The neutron diffraction and also the atomicforce and electron microscopy show that the prepared visually transparent films have amorphous structure, exhibit dielectric properties, and their morphology is similar to that of opals. The samples have been studied by differential scanning calorimetry, Raman and IR spectroscopy before and after their heat treatment. It is found that annealing of the films in air at a temperature of 1273 K leads to a change in their chemical compositions: an amorphous SiO$_2$ compound with inclusions of SiO$_2$ nanocrystals (crystobalite) forms.

Received: 19.09.2017

DOI: 10.21883/FTT.2018.04.45678.271


 English version:
Physics of the Solid State, 2018, 60:4, 705–709

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