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Fizika Tverdogo Tela, 2018 Volume 60, Issue 3, Pages 482–489 (Mi ftt9266)

This article is cited in 9 papers

Semiconductors

Influence of morphological defects on thermophysical properties of $\gamma$-Gd$_{2}$S$_{3}$

A. V. Sotnikova, V. V. Bakovetsa, A. Sh. Agazhanovb, S. V. Stankusb, D. P. Pishchura, V. V. Sokolova

a Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
b S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences

Abstract: The temperature dependences of the heat capacity $(C_p)$ and the thermal conductivity $(\kappa)$ in the temperature range from 300 to 773 K of polycrystalline gadolinium sulfide samples ($\gamma$-GdS$_ y$) with the deviation of the composition from the integer stoichiometric were studied. It was found that the thermal conductivity of gadolinium sulfides decreases monotonically and reaches 0.74 W/(m K) at $T$ = 773 K for the composition $y$ = 1.479, which is much lower than for the known single-crystal samples. The influence of morphological defects (boundaries of crystallites and dislocations) on the intensity of scattering of phonons is studied. It has been established that ceramic samples of gadolinium sulphides have a large heat capacity and a lower thermal conductivity, in comparison with monocrystalline samples of the same composition.

Received: 20.04.2017
Revised: 24.08.2017

DOI: 10.21883/FTT.2018.03.45548.137


 English version:
Physics of the Solid State, 2018, 60:3, 487–493

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