N. V. Melnikova, A. V. Tebenkov, G. V. Sukhanova, A. N. Babushkin, L. A. Saypulaeva, V. S. Zakhvalinskii, S. F. Gabibov, A. G. Alibekov, A. Yu. Mollaev, “Thermoelectric properties of a ferromagnetic semiconductor based on a Dirac semimetal Cd$_{3}$As$_{2}$ under high pressure”, Fizika Tverdogo Tela, 2018, Volume 60, Issue 3,Pages 490

This article is cited in 12 papers

Semiconductors

Thermoelectric properties of a ferromagnetic semiconductor based on a Dirac semimetal Cd$_{3}$As$_{2}$ under high pressure

N. V. Melnikova^a, A. V. Tebenkov^a, G. V. Sukhanova^a, A. N. Babushkin^a, L. A. Saypulaeva^b, V. S. Zakhvalinskii^c, S. F. Gabibov^b, A. G. Alibekov^b, A. Yu. Mollaev^b

^a Institute of Natural Sciences and Mathematics, Ural Federal University
^b Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
^c National Research University "Belgorod State University"

Abstract: The pressure dependences of thermal emf (a parameter that ranks among the most sensitive to phase transformations) are studied for the purpose of identifying baric phase transitions in the 10–50 GPa interval in the Cd$_{3}$As$_{2}$ + MnAs (44.7% MnAs) structure formed by ferromagnetic MnAs granules in a semiconductor Cd$_{3}$As$_{2}$ matrix.

Received: 20.09.2017

DOI: 10.21883/FTT.2018.03.45550.274