O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, V. P. Lesnikov, A. V. Nezhdanov, S. A. Pavlov, A. E. Parafin, I. Yu. Pashen'kin, S. M. Plankina, “Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing”, Fizika Tverdogo Tela, 2017, Volume 59, Issue 11,Pages 2130

This article is cited in 6 papers

XX International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 13-16, 2017
Semiconductors

Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

O. V. Vikhrova^a, Yu. A. Danilov^a, B. N. Zvonkov^a, A. V. Zdoroveyshchev^a, A. V. Kudrin^a, V. P. Lesnikov^a, A. V. Nezhdanov^a, S. A. Pavlov^b, A. E. Parafin^ab, I. Yu. Pashen'kin^a, S. M. Plankina^a

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A$^{3}$B$^{5}$: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of $\sim$30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of $>$ 230 mJ/cm$^2$, the hole concentration in GaAs: Mn layers increases to 3 $\times$ 10$^{20}$ cm$^{-3}$. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.

DOI: 10.21883/FTT.2017.11.45049.12k